Author:
Yasir M.,Mäkelä J.,Koiva D.,Tuominen M.,Dahl J.,Lehtiö J.-P.,Kuzmin M.,Rad Z. Jahanshah,Punkkinen M.,Laukkanen P.,Kokko K.,Polojärvi V.,Lyytikäinen J.,Tukiainen A.,Guina M.
Subject
General Materials Science
Reference14 articles.
1. A novel atomic layer doping technology for ultra-shallow junction in sub-0.1 um MOSFETs;Song,1999
2. Controlled nanoscale doping of semiconductors via molecular monolayers;Ho;Nat. Mat.,2008
3. Donor deactivation in silicon nanostructures;Björk;Nat. Nanotechnol.,2009
4. A doping-less junction-formation mechanism between n-silicon and an atomically thin boron layer;Mohammadi;Sci. Rep.,2017
5. S.-Y. Hu, Z. Pan, Mesa-type photodetectors with lateral diffusion junctions, Patent US 8030684 B2 (2011).
Cited by
1 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献