Graded InxGa1−xAs/GaAs 1.3 μm wavelength light emitting diode structures grown with molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.366646
Reference29 articles.
1. A1.3 μm strained quantum well laser on a graded InGaAs buffer with a GaAs substrate
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5. Application of ‘‘critical compositional difference’’ concept to the growth of low dislocation density (<104/cm2) InxGa1−xAs (x≤0.5) on GaAs
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