1.3 μm electroabsorption reflection modulators on GaAs
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.109914
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1. Investigation of high In content InGaAs quantum wells grown on GaAs by molecular beam epitaxy
2. Optimization of modulation ratio and insertion loss in reflective electroabsorption modulators
3. QUANTUM WELL OPTOELECTRONIC SWITCHING DEVICES
4. Refractive indices of InAlAs and InGaAs/InP from 250 to 1900 nm determined by spectroscopic ellipsometry
5. Refractive Index of Ga1-xInxAs Prepared by Vapor-Phase Epitaxy
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2. Effect of a low-temperature thin buffer layer on the strain accommodation of In0.25Ga0.75As grown on a GaAs (001) substrate;Semiconductor Science and Technology;2003-08-11
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4. Dislocation dynamics in relaxed graded composition semiconductors;Materials Science and Engineering: B;1999-12
5. Graded InxGa1−xAs/GaAs 1.3 μm wavelength light emitting diode structures grown with molecular beam epitaxy;Journal of Applied Physics;1998-01
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