Dislocation dynamics in relaxed graded composition semiconductors-Reference-Cited by-同舟云学术

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Dislocation dynamics in relaxed graded composition semiconductors

Published:1999-12 Issue:1-2 Volume:67 Page:53-61
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Fitzgerald E.A,Kim A.Y,Currie M.T,Langdo T.A,Taraschi G,Bulsara M.T

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference19 articles.

1. Silicon-Based Microphotonics and Integrated Optoelectronics

2. 1.3 μm electroabsorption reflection modulators on GaAs

3. Graded InxGa1−xAs/GaAs 1.3 μm wavelength light emitting diode structures grown with molecular beam epitaxy

4. Relaxed InxGa1−xAs graded buffers grown with organometallic vapor phase epitaxy on GaAs

5. Engineering Dislocation Dynamics in Inx(AlyGa1−y)1−xP Graded Buffers Grown on Gap by Movpe

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