Refractive indices of InAlAs and InGaAs/InP from 250 to 1900 nm determined by spectroscopic ellipsometry-Reference-Cited by-同舟云学术

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Refractive indices of InAlAs and InGaAs/InP from 250 to 1900 nm determined by spectroscopic ellipsometry

Published:1992-01 Issue: Volume:54 Page:477-481
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Dinges H.W.,Burkhard H.,Lösch R.,Nickel H.,Schlapp W.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference7 articles.

1. Optical properties of In1−xGaxP1−yAsy, InP, GaAs, and GaP determined by ellipsometry

2. Optical properties ofIn1−xGaxAsyP1−yfrom 1.5 to 6.0 eV determined by spectroscopic ellipsometry

3. Determination of ion beam etching damage on InP by spectroscopic ellipsometry

4. Proc. 4th Eur. Conf. Int. Optics;Krauser,1987

5. Non-destructive characterisation of (Ga,In,Al,As,P)-based ternary multilayer structures using spectroscopic ellipsometry

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