Non-destructive characterisation of (Ga,In,Al,As,P)-based ternary multilayer structures using spectroscopic ellipsometry-Reference-Cited by-同舟云学术

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Non-destructive characterisation of (Ga,In,Al,As,P)-based ternary multilayer structures using spectroscopic ellipsometry

Published:1991-06 Issue:1-4 Volume:50 Page:346-352
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Pickering C.,Garawal N.S.,Lancefield D.,Piel J.P.,Blunt R.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference7 articles.

1. Variable angle of incidence spectroscopic ellipsometry: Application to GaAs‐AlxGa1−xAs multiple heterostructures

2. Spectroscopic ellipsometry studies of excitonic features and optical functions of AlxGa1−xAs/GaAs multiple quantum well structures

3. Dielectric functions and optical parameters of Si, Ge, GaP, GaAs, GaSb, InP, InAs, and InSb from 1.5 to 6.0 eV

4. Peroxide etch chemistry on 〈100〉In0.53Ga0.47As

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1. Optical determination of thickness and composition of buried strained Si1−Ge HBT alloys;Applied Surface Science;2003-05

2. Calculations of optical properties for quaternary III–V semiconductor alloys in the transparent region and above (0.2–4.0eV);Physica B: Condensed Matter;2002-06

3. Calculations of Dielectric Constant for AlGaInAs Quaternary Semiconductor Alloy in the Transparent Region and Above (0.4-4.0eV);MRS Proceedings;2001

4. Nondestructive characterization of semiconductor multilayers;JOM;1994-09

5. Non-destructive characterization of III–V alloy multilayer structures using spectroscopic ellipsometry;Thin Solid Films;1993-10

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