Peroxide etch chemistry on 〈100〉In0.53Ga0.47As
Author:
Publisher
American Vacuum Society
Subject
General Engineering
Link
http://avs.scitation.org/doi/pdf/10.1116/1.571667
Cited by 33 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
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2. Nanoscale Etching of In0.53Ga0.47As in H2O2/HCl Solutions for Advanced CMOS Processing;ECS Journal of Solid State Science and Technology;2014
3. Band offsets at interfaces of (100)InxGa1−xAs (0⩽x⩽0.53) with Al2O3 and HfO2;Microelectronic Engineering;2009-07
4. Energy barriers at interfaces between (100) InxGa1−xAs (0≤x≤0.53) and atomic-layer deposited Al2O3 and HfO2;Applied Physics Letters;2009-05-18
5. Investigation of citric acid-hydrogen peroxide etched GaAs and Al[sub 0.3]Ga[sub 0.7]As surfaces by spectroscopic ellipsometry;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1998-09
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