Optical determination of thickness and composition of buried strained Si1−Ge HBT alloys-Reference-Cited by-同舟云学术

Optical determination of thickness and composition of buried strained Si1−Ge HBT alloys

Published:2003-05 Issue:1-4 Volume:214 Page:75-82
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Scheirer C.M.,Jones R.F.,Nguyen P.,Pois H.,Zangooie S.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference21 articles.

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3. Bandgap and transport properties of Si/sub 1-x/Ge/sub x/ by analysis of nearly ideal Si/Si/sub 1-x/Ge/sub x//Si heterojunction bipolar transistors

4. H.-I. Cong, S.M. Logan, M.J. Loinaz, K.J. O’Brien, E.E. Perry, G.D. Polhemus, J.E. Scoggins, K.P. Snowdon, M.G. Ward, ISSCC Digest of Technical Papers, 2001, pp. 80–81.

5. R. Holfmann, B. Jelonnek, H. Kling, A. Splett, E. Koenig, ISSCC Digest of Technical Papers, 2001, pp. 420–421.

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