Calculations of Dielectric Constant for AlGaInAs Quaternary Semiconductor Alloy in the Transparent Region and Above (0.4-4.0eV)

Abstract

AbstractThe modeling of the spectral behavior of the refractive index of AlGaInAs quaternary IIIV semiconductor alloy in the energy range from 0.4 to 4eV, including the transparent region, is presented. The extended model of interband transition contributions incorporates not only the fundamental absorption edge contribution to the dielectric function, but also contributions from higher energy and indirect transitions. It is demonstrated that indirect energy transitions must be included in the calculations of the complex dielectric function of the material in the transparent region. Indirect transitions from different critical points in the Brillouin zone are treated separately. The comparison between the theoretical refractive indices and the experimental data for AlGaInAs alloy is presented. These calculations have been applied to the design of Bragg mirrors with the highest refractive index contrast for heterostructure lasers.