Non-destructive characterization of III–V alloy multilayer structures using spectroscopic ellipsometry-Reference-Cited by-同舟云学术

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Non-destructive characterization of III–V alloy multilayer structures using spectroscopic ellipsometry

Published:1993-10 Issue:1-2 Volume:233 Page:171-175
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Pickering C.,Carline R.T.,Garawal N.S.,Stehlé J.L.,Piel J.P.,Blunt R.,Kirby P.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference13 articles.

1. Non-destructive characterisation of (Ga,In,Al,As,P)-based ternary multilayer structures using spectroscopic ellipsometry

2. Peroxide etch chemistry on 〈100〉In0.53Ga0.47As

3. Optical Properties of GaAs and Its Electrochemically Grown Anodic Oxide from 1.5 to 6.0 eV

4. Dielectric functions and optical parameters of Si, Ge, GaP, GaAs, GaSb, InP, InAs, and InSb from 1.5 to 6.0 eV

5. S. A. Alterovitz, personal communication.

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Characterization of complex inter-layer dielectric stack by spectroscopic ellipsometry: A simple method to reduce parameters correlations;Thin Solid Films;2014-01

2. Precise etch stop for emitter etching of self-aligned heterojunction bipolar transistors;Applied Surface Science;1997-06

3. Nondestructive characterization of semiconductor multilayers;JOM;1994-09

4. Study of In0.53Ga0.47As/In0.52Al0.48As quantum wells on InP by spectroscopic ellipsometry and photoluminescence;Surface Science;1994-04

5. Modeling of InGaAs optical constants and its application to spectroscopic ellipsometry study of strained InGaAs/AlGaAs based structures;MRS Proceedings;1994

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