Characterization of complex inter-layer dielectric stack by spectroscopic ellipsometry: A simple method to reduce parameters correlations-Reference-Cited by-同舟云学术

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Characterization of complex inter-layer dielectric stack by spectroscopic ellipsometry: A simple method to reduce parameters correlations

Published:2014-01 Issue: Volume:550 Page:305-311
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Likhachev D.V.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference43 articles.

1. Characterization and Metrology for ULSI Technology 2003, Austin, TX, U.S.A., March 24–28, 2003;Diebold,2003

2. Frontiers of Characterization and Metrology for Nanoelectronics, Grenoble, France, May 23–26, 2011;Kamineni,2011

3. Ellipsometry for Industrial Applications;Riedling,1988

4. A User's Guide to Ellipsometry;Tompkins,1993

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Efficient thin-film stack characterization using parametric sensitivity analysis for spectroscopic ellipsometry in semiconductor device fabrication;Thin Solid Films;2015-08

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