Application of ‘‘critical compositional difference’’ concept to the growth of low dislocation density (<104/cm2) InxGa1−xAs (x≤0.5) on GaAs
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.351699
Reference9 articles.
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4. Strain relief study concerning the InxGa1−xAs/GaAs (0.07
5. Measurements of the critical resolved shear stress for indium‐doped and undoped GaAs single crystals
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