Strain relief study concerning the InxGa1−xAs/GaAs (0.07
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.105045
Reference12 articles.
1. Generation of misfit dislocations in semiconductors
2. Characteristics of dislocations at strained heteroepitaxial InGaAs/GaAs interfaces
3. Structure and recombination in InGaAs/GaAs heterostructures
4. Calculation of critical layer thickness versus lattice mismatch for GexSi1−x/Si strained‐layer heterostructures
5. Defects associated with the accommodation of misfit between crystals
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