Peculiarities of strain relaxation in linearly graded InxGa1−xAs/GaAs(001) metamorphic buffer layers grown by molecular beam epitaxy-Reference-Cited by-同舟云学术

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Peculiarities of strain relaxation in linearly graded InxGa1−xAs/GaAs(001) metamorphic buffer layers grown by molecular beam epitaxy

Published:2016-12 Issue: Volume:455 Page:83-89
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Sorokin S.V.,Klimko G.V.,Sedova I.V.,Sitnikova A.A.,Kirilenko D.A.,Baidakova M.V.,Yagovkina M.A.,Komissarova T.A.,Belyaev K.G.,Ivanov S.V.

Funder

Russian Science Foundation

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference33 articles.

1. Totally relaxed GexSi1−x layers with low threading dislocation densities grown on Si substrates;Fitzgerald;Appl. Phys. Lett.,1991

2. Heteroepitaxial growth of InP/In0.52Ga0.48As structures on GaAs (100) by gas-source molecular beam epitaxy;Chin;Appl. Phys. Lett.,1993

3. Compositionally-graded InGaAs–InGaP alloys and GaAsSb alloys for metamorphic InP on GaAs;Yang;J. Cryst. Growth,2011

4. Low threshold current density 1.3µm metamorphic InGaAs/GaAs quantum well laser diodes;Wu;Electron. Lett.,2008

5. III–V multijunction solar cells for concentrating photovoltaics;Cotal;Energy Environ. Sci.,2009

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1. Impact of MBE-grown (In,Ga)As/GaAs metamorphic buffers on excitonic and optical properties of single quantum dots with single-photon emission tuned to the telecom range;Physical Review Applied;2023-10-04

2. Structural properties of graded In_xGa 1−x As metamorphic buffer layers for quantum dots emitting in the telecom bands;Materials for Quantum Technology;2023-08-14

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4. Thin-film InGaAs metamorphic buffer for telecom C-band InAs quantum dots and optical resonators on GaAs platform;Nanophotonics;2022-02-02

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