Structure and recombination in InGaAs/GaAs heterostructures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.340059
Reference22 articles.
1. Photoconductivity effects in extremely high mobility modulation‐doped (Al,Ga)As/GaAs heterostructures
2. On the collapse of drain I-V characteristics in modulation-doped FET's at cryogenic temperatures
3. In0.14Ga0.86As Solar Cells Grown by Molecular-Beam Epitaxy
4. An In0.15Ga0.85As/GaAs pseudomorphic single quantum well HEMT
5. GaAs/In0.08Ga0.92As Double Heterojunction Bipolar Transistors with a Lattice-Mismatched Base
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