Photoconductivity effects in extremely high mobility modulation‐doped (Al,Ga)As/GaAs heterostructures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.330537
Reference9 articles.
1. Dependence of electron mobility on spatial separation of electrons and donors in AlxGa1−xAs/GaAs heterostructures
2. Room-Temperature Mobility of Two-Dimensional Electron Gas in Selectively Doped GaAs/N-AlGaAs Heterojunction Structures
3. Transport properties in GaAs-AlxGa1−xAs heterostructures and MESFET application
4. Experimental and theoretical electron mobility of modulation doped AlxGa1−xAs/GaAs heterostructures grown by molecular beam epitaxy
5. Influence of an undoped (AlGa)As spacer on mobility enhancement in GaAs‐(AlGa)As superlattices
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1. Interlayer charge transfer in n-modulation doped Al1−x Ga x As–GaAs single heterostructures;Semiconductor Science and Technology;2018-08-22
2. Compression of the dc drain current by electron trapping in AlGaN/GaN modulation doped field-effect transistors;Applied Physics Letters;2001-05-07
3. Current-voltage characteristics and field distribution of pseudomorphic (AlGaAs/InGaAs) modulation-doped field-effect transistor for microwave circuit applications;Microwave and Optical Technology Letters;2000-03-20
4. Characteristics of InxGa1−xAs/GaAs pseudomorphic modulation doped field effect transistor;Journal of Applied Physics;1997-05-15
5. Characteristics of δ -doped InGaAs/GaAs pseudomorphic double-quantum-well high electron mobility transistors;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1995-03
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