Compression of the dc drain current by electron trapping in AlGaN/GaN modulation doped field-effect transistors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1367274
Reference13 articles.
1. High-power microwave GaN/AlGaN HEMTs on semi-insulating silicon carbide substrates
2. High performance GaN/AlGaN MODFETs grown by RF-assisted MBE
3. Short-channel Al0.5Ga0.5N/GaN MODFETs with power density > 3 W/mm at 18 GHz
4. Drain current compression in GaN MODFETs under large-signal modulation at microwave frequencies
5. On the collapse of drain I-V characteristics in modulation-doped FET's at cryogenic temperatures
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1. Dependence of Electrical Characteristics on Epitaxial Layer Structure of AlGaN/GaN HEMTs Fabricated on Freestanding GaN Substrates;IEEE Transactions on Electron Devices;2022-01
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3. Hole trap, leakage current and barrier inhomogeneity in (Pt/Au) Al0.2Ga0.8N/GaN heterostructures;Journal of Physics and Chemistry of Solids;2019-09
4. Characterisation of the effect of surface passivation with SiO2/SiN on deep levels in AlGaN/GaN/Si HEMTs;Journal of Alloys and Compounds;2015-12
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