The effect of elastic strain on energy band gap and lattice parameter in III‐V compounds
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.324472
Reference19 articles.
1. Visible GaAs0.7P0.3cw heterojunction lasers
2. Vapor‐grown cw room‐temperature GaAs/InyGa1−yP lasers
3. cw room‐temperature InxGa1−xAs/InyGa1−yP 1.06‐μm lasers
4. Reduction of dislocation densities in heteroepitaxial III−V VPE semiconductors
5. Interfacial lattice mismatch effects in III–V compounds
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