Visible GaAs0.7P0.3cw heterojunction lasers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.89353
Reference6 articles.
1. Room‐temperature heterojunction laser diodes from vapor‐grown In1−xGaxP/GaAs structures
2. Vapor‐grown cw room‐temperature GaAs/InyGa1−yP lasers
3. Room‐temperature heterojunction laser diodes of InxGa1−xAs/InyGa1−yP with emission wavelength between 0.9 and 1.15 μm
4. Low‐threshold double heterojunction AlGaAs/GaAs laser diodes: Theory and experiment
5. Interfacial recombination at (AlGa)As/GaAs heterojunction structures
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2. Sustained oscillations in GaInP/AlGalnP visible diode lasers;Optical and Quantum Electronics;1995-02
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4. Fabrication and lasing characteristics of 0.67 µm GaInAsP/AlGaAs visible lasers prepared by liquid phase epitaxy on;IEEE Journal of Quantum Electronics;1987-02
5. Analysis of Compositional Variation at Initial Transient Time in LPE Growth of InGaAsP/GaAs System;Japanese Journal of Applied Physics;1985-08-20
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