Dependence of indium incorporation upon the substrate misorientation during growth of In x Ga 1 − x As by metalorganic vapour phase epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference37 articles.
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3. Influence of the substrate misorientation on the properties of N-polar InGaN/GaN and AlGaN/GaN heterostructures;Journal of Applied Physics;2008-11
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5. Dissociated V-shaped dislocation model for the relaxation of strained single heterostructures;Materials Science and Engineering: B;1998-03
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