Orientation‐dependent doping in organometallic chemical vapor deposition on nonplanar InP substrates: Application to double‐heterostructure lasers and lateralp‐njunction arrays-Reference-Cited by-同舟云学术

Orientation‐dependent doping in organometallic chemical vapor deposition on nonplanar InP substrates: Application to double‐heterostructure lasers and lateralp‐njunction arrays

Published:1990-04-23 Issue:17 Volume:56 Page:1691-1693
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Bhat R.,Zah C. E.,Caneau C.,Koza M. A.,Menocal S. G.,Schwarz S. A.,Favire F. J.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.103119

Reference10 articles.

1. A study of the orientation dependence of Ga(Al)As growth by MOVPE

2. Patterned quantum well heterostructures grown by OMCVD on non-planar substrates: Applications to extremely narrow SQW lasers

3. Design of guided‐wave components using growth of GaAs/AlGaAs superlattices on patterned substrates by organometallic chemical vapor deposition

4. Code: A novel MOVPE technique for the single stage growth of buried ridge double heterostructure lasers and waveguides

5. Buried GaInAs/InP layers grown on nonplanar substrates by one‐step low‐pressure metalorganic vapor phase epitaxy

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