Buried GaInAs/InP layers grown on nonplanar substrates by one‐step low‐pressure metalorganic vapor phase epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.100180
Reference7 articles.
1. A novel technology for formation of a narrow active layer in buried heterostructure lasers by single-step MOCVD
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3. A study of the orientation dependence of Ga(Al)As growth by MOVPE
4. A new method for the growth of GaAs epilayer at low H2 pressure
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