Analysis of InP etched surfaces using metalorganic chemical vapor deposition regrown quantum well structures
-
Published:1995-11
Issue:6
Volume:13
Page:2381
-
ISSN:0734-211X
-
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
-
language:
-
Short-container-title:J. Vac. Sci. Technol. B
Publisher
American Vacuum Society
Subject
General Engineering
Cited by
4 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Metallization-induced damage in III–V semiconductors;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1998-11
2. Reduced damage reactive ion etching process for fabrication of InGaAsP/InGaAs multiple quantum well ridge waveguide lasers;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1998-07
3. Chemical gas etching of InP-based structures;Microelectronic Engineering;1997-02
4. Investigation of improved regrown material on InP surfaces etched with methane/hydrogen/argon;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1996-11