Structures for improved 1.5 μm wavelength lasers grown by LP-OMVPE; InGaAs-InP strained-layer quantum wells a good candidate-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Structures for improved 1.5 μm wavelength lasers grown by LP-OMVPE; InGaAs-InP strained-layer quantum wells a good candidate

Published:1991-01 Issue:1-4 Volume:107 Page:731-740
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Thijs P.J.A.,Montie E.A.,van Dongen T.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference49 articles.

1. R. Dingle and C.H. Henry, US Patent 3,982,207 (1976).

2. Atomic abruptness in InGaAsP/InP quantum well heterointerfaces grown by low‐pressure organometallic vapor phase epitaxy

3. High quality InGaAsPInP for multiple quantum well laser diodes grown by low-pressure OMVPE

4. Atomic steps at GaInAs/InP interfaces grown by organometallic vapor phase epitaxy

Cited by 23 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Structural, electronic, optical and thermodynamic properties of the cubic quadratic quaternary alloys GaxIn1-xAsyN1-y. Insight from DFT computations;Materials Today Communications;2021-03

2. Laser Components;Springer Series in Optical Sciences;2017

3. Laser Components;Springer Series in Optical Sciences;2012

4. Effects of barrier alloy composition and number of stacks in the optical and structural characteristics of strain compensated InxGa1−xAsyP1−y/InzGa1−zAstP1−t/InP multiquantum wells;Journal of Applied Physics;2002-05

5. Extraction of density profile for near perfect multilayers;Physical Review B;1998-08-15

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP