Influence of the substrate misorientation on the properties of N-polar InGaN/GaN and AlGaN/GaN heterostructures-Reference-Cited by-同舟云学术

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Influence of the substrate misorientation on the properties of N-polar InGaN/GaN and AlGaN/GaN heterostructures

Published:2008-11 Issue:9 Volume:104 Page:093510
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Keller S.,Suh C. S.,Fichtenbaum N. A.,Furukawa M.,Chu R.,Chen Z.,Vijayraghavan K.,Rajan S.,DenBaars S. P.,Speck J. S.,Mishra U. K.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3006132

Reference28 articles.

1. Growth mode and surface morphology of a GaN film deposited along the N-face polar direction on c-plane sapphire substrate

2. Two-dimensional electron gases in Ga-face and N-face AlGaN/GaN heterostructures grown by plasma-induced molecular beam epitaxy and metalorganic chemical vapor deposition on sapphire

3. Spontaneous polarization and piezoelectric constants of III-V nitrides

4. Playing with Polarity

5. Molecular beam epitaxy growth of GaN on C-terminated 6H–SiC (0001¯) surface

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