High Efficiency Deep Ultraviolet Light-Emitting Diodes With Polarity Inversion of Hole Injection Layer-Reference-Cited by-同舟云学术

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High Efficiency Deep Ultraviolet Light-Emitting Diodes With Polarity Inversion of Hole Injection Layer

Published:2023-04 Issue:2 Volume:15 Page:1-5
ISSN:1943-0655
Container-title:IEEE Photonics Journal
language:
Short-container-title:IEEE Photonics J.

Author:

Liu Xu¹^ORCID,Xu Shengrui¹,Tao Hongchang¹^ORCID,Cao Yanrong²,Wang Xinhao¹,Shan Hengsheng³^ORCID,Zhang Jincheng¹^ORCID,Hao Yue¹^ORCID

Affiliation:

1. State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an, China

2. School of Mechanical and Electrical Engineering, Xidian University, Xi'an, China

3. Materials Institute of Atomic and Molecular Science, Shaanxi University of Science and Technology, Weiyang University Park, Xi'an, China

Funder

National Natural Science Foundation of China

State Key Laboratory on Integrated Optoelectronics

Natural Science Basic Research Program of Shaanxi

Fundamental Research Funds for the Central Universities

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics

Link

http://xplorestaging.ieee.org/ielx7/4563994/10050262/10049627.pdf?arnumber=10049627

Reference32 articles.

1. Suppression of electron overflow and efficiency droop in N-polar GaN green light emitting diodes

2. The Effects of Polarization-Modulated Quaternary AlInGaN Barriers in Deep-UV-LED

3. Enhanced performance of N-polar AlGaN-based deep-ultraviolet light-emitting diodes

4. Greatly Enhanced Wall-Plug Efficiency of N-polar AlGaN-Based Deep Ultraviolet Light-Emitting Diodes

5. Recent progress in metal-organic chemical vapor deposition of $\left( 000\bar{1} \right)$ N-polar group-III nitrides

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Influence of the thickness of p-GaN ohmic contact layer on the performance of AlGaN-based deep-ultraviolet light-emitting diodes;Materials Science in Semiconductor Processing;2024-02

2. Study of ultraviolet light emitting diodes with InGaN quantum dots and lattice matched superlattice electron blocking layers;Optics Express;2024-01-30

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