Influence of the thickness of p-GaN ohmic contact layer on the performance of AlGaN-based deep-ultraviolet light-emitting diodes-Reference-Cited by-同舟云学术

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Influence of the thickness of p-GaN ohmic contact layer on the performance of AlGaN-based deep-ultraviolet light-emitting diodes

Published:2024-02 Issue: Volume:170 Page:107939
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Cao Yiwei,Lv Quanjiang^ORCID,Liu Ju,Yang Tianpeng,Mi Tingting,Wang Xiaowen,Li Shuti,Liu Junlin

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference41 articles.

1. The emergence and prospects of deep-ultraviolet light-emitting diode technologies;Kneissl;Nat. Photonics,2019

2. Effects of meshed p-type contact structure on the light extraction effect for deep ultraviolet flip-chip light-emitting diodes;Zheng;Nanoscale Res. Lett.,2019

3. A critical review on ultraviolet disinfection systems against COVID-19 outbreak: applicability, validation, and safety considerations;Raeiszadeh;ACS Photonics,2020

4. Improved carrier injection of AlGaN-based deep ultraviolet light emitting diodes with graded superlattice electron blocking layers;So;RSC Adv.,2018

5. Improved Ohmic contacts to plasma etched high Al fraction n-AlGaN by active surface pretreatment;Zhang;Appl. Phys. Lett.,2021

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