Improved Ohmic contacts to plasma etched high Al fraction n-AlGaN by active surface pretreatment-Reference-Cited by-同舟云学术

Improved Ohmic contacts to plasma etched high Al fraction n-AlGaN by active surface pretreatment

Published:2021-05-31 Issue:22 Volume:118 Page:222101
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Zhang N.¹,Xu F. J.¹^ORCID,Lang J.¹^ORCID,Wang L. B.¹,Wang J. M.¹,Liu B. Y.¹,Fang X. Z.¹,Yang X. L.¹^ORCID,Kang X. N.¹,Wang X. Q.¹²³^ORCID,Qin Z. X.¹,Ge W. K.¹,Shen B.¹²³

Affiliation:

1. State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China

2. Nano-optoelectronics Frontier Center of Ministry of Education, Peking University, Beijing 100871, China

3. Collaborative Innovation Center of Quantum Matter, Beijing 100871, China

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

Aera Research and Development Project of Guangdong Province

Major Scientific and Technological Innovation Project of Shandong Province

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0042621

Reference20 articles.

1. The emergence and prospects of deep-ultraviolet light-emitting diode technologies

2. 13 mW operation of a 295–310 nm AlGaN UV-B LED with a p-AlGaN transparent contact layer for real world applications

3. Survey of ultraviolet non-line-of-sight communications

4. M. Kneissl , III-Nitride Ultraviolet Emitters: Technology and Applications ( Springer, 2016), p. 1.

5. AlGaN photonics: recent advances in materials and ultraviolet devices

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