Improvements in characteristics of N-polar Si-doped AlGaN epi-layer grown on mis-oriented c-plane sapphire substrate
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference20 articles.
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3. N-polar III–nitride green (540 nm) light emitting diode;Akyol;Jpn. J. Appl. Phys.,2011
4. Polarization-dependent optical characteristics of violet InGaN laser diodes;Yen;J. Appl. Phys.,2008
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Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Achieving semi-metallic conduction in Al-rich AlGaN: Evidence of Mott transition;Applied Physics Letters;2024-06-10
2. Tunable bandgap and Si-doping in N-polar AlGaN on C-face 4H-SiC via molecular beam epitaxy;Applied Physics Letters;2023-10-30
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