Theoretical investigations on the N-polar GaN/AlxGa1-xN/GaN heterostructures: Considering the existence of both two-dimensional hole and electron gases-Reference-Cited by-同舟云学术

Theoretical investigations on the N-polar GaN/AlxGa1-xN/GaN heterostructures: Considering the existence of both two-dimensional hole and electron gases

Published:2016-09-28 Issue:12 Volume:120 Page:124501
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Yan Junda¹^ORCID,Wang Quan¹²,Wang Xiaoliang¹^ORCID,Feng Chun¹,Xiao Hongling¹,Liu Shiming¹,Gong Jiamin²,Liu Fengqi¹,Li Baiquan³

Affiliation:

1. Key Laboratory of Semiconductor Materials Science, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

2. School of Electronic Engineering, Xi'an University of Posts and Telecommunications, Xi'an 710049, China

3. Beijing Huajin Chuangwei Technology Co., Ltd., Beijing 100036, China

Funder

National Basic Research Program of China

National Nature Sciences Foundation of China

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4962856

Reference32 articles.