Hillocks and hexagonal pits in a thick film grown by HVPE
Author:
Publisher
Elsevier BV
Subject
General Engineering
Reference17 articles.
1. High‐power InGaN single‐quantum‐well‐structure blue and violet light‐emitting diodes
2. Growth and characterization of InGaN blue LED structure on Si(111) by MOCVD
3. High-sheet-charge–carrier-density AlInN∕GaN field-effect transistors on Si(111)
4. High electron mobility transistor based on a GaN‐AlxGa1−xN heterojunction
5. High speed, low noise ultraviolet photodetectors based on GaN p-i-n and AlGaN(p)-GaN(i)-GaN(n)structures
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1. Self-assembled Growth of GaN Nanostructures on Flexible Metal Foils by Laser Molecular Beam Epitaxy;Emerging Trends in Nanotechnology;2021
2. 3D numerical analysis of influence of the non-uniform deposition rate on the hillock density at HVPE-GaN surface;Journal of Crystal Growth;2017-09
3. Structural, electrical and luminescent characteristics of ultraviolet light emitting structures grown by hydride vapor phase epitaxy;Modern Electronic Materials;2017-03
4. Numerical analysis on the origin of thickness unevenness and formation of pits at GaN thin film grown by HVPE;Journal of Crystal Growth;2016-09
5. Thick (>20 µm) and high-resistivity carbon-doped GaN-buffer layers grown by metalorganic vapor phase epitaxy on n-type GaN substrates;Japanese Journal of Applied Physics;2016-04-22
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