Thick (>20 µm) and high-resistivity carbon-doped GaN-buffer layers grown by metalorganic vapor phase epitaxy on n-type GaN substrates
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/55/i=5S/a=05FE05/pdf
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