Semi-insulating GaN for vertical structures: role of substrate selection and growth pressure-Reference-Cited by-同舟云学术

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Semi-insulating GaN for vertical structures: role of substrate selection and growth pressure

Published:2020-11 Issue: Volume:118 Page:105203
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Šichman P.,Hasenöhrl S.,Stoklas R.,Priesol J.,Dobročka E.,Haščík Š.,Gucmann F.,Vincze A.,Chvála A.,Marek J.,Šatka A.,Kuzmik J.

Funder

Slovak R&D Agency

VEGA

MESRS

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference24 articles.

1. Electrothermal Simulation and Thermal Performance Study of GaN Vertical and Lateral Power Transistors

2. The 2018 GaN power electronics roadmap

3. Fully Vertical GaN-on-Si power MOSFETs

4. High-Performance GaN Vertical Fin Power Transistors on Bulk GaN Substrates

5. 2017 IEEE International Electron Devices Meeting;Zhang,2017

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1. From wide to ultrawide-bandgap semiconductors for high power and high frequency electronic devices;Journal of Physics: Materials;2024-03-08

2. Heteroepitaxial growth of Ga2O3 on 4H-SiC by liquid-injection MOCVD for improved thermal management of Ga2O3 power devices;Journal of Vacuum Science & Technology A;2023-06-08

3. Vertical GaN Transistor with Semi‐Insulating Channel;physica status solidi (a);2023-04-13

4. Thermal management and packaging of wide and ultra-wide bandgap power devices: a review and perspective;Journal of Physics D: Applied Physics;2023-02-16

5. Analysis and Modeling of Vertical Current Conduction and Breakdown Mechanisms in Semi-Insulating GaN Grown on GaN: Role of Deep Levels;IEEE Transactions on Electron Devices;2021-05

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