Growth and characterization of InGaN blue LED structure on Si(111) by MOCVD
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference19 articles.
1. High quality GaN grown on Si(111) by gas source molecular beam epitaxy with ammonia
2. Metalorganic Chemical Vapor Phase Epitaxy of Crack-Free GaN on Si (111) Exceeding 1 µm in Thickness
3. Stress control in GaN grown on silicon (111) by metalorganic vapor phase epitaxy
4. Growth of GaN free from cracks on a (111)Si substrate by selective metalorganic vapor-phase epitaxy
5. Efficient stress relief in GaN heteroepitaxy on Si(111) using low-temperature AlN interlayers
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