Efficient stress relief in GaN heteroepitaxy on Si(111) using low-temperature AlN interlayers
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference8 articles.
1. Stress evolution during metalorganic chemical vapor deposition of GaN
2. Physical Origins of Intrinsic Stresses in Volmer–Weber Thin Films
3. Effect of Si doping on strain, cracking, and microstructure in GaN thin films grown by metalorganic chemical vapor deposition
4. Shigeo Yamaguchi, Michihiko Kariya, Masayoshi Kosaki, Yohei Yukawa, Shugo Nitta, Hiroshi Amano, Isamu Akasaki, J. Appl. Phys. 89 (2001) 7820.
5. Metalorganic Chemical Vapor Phase Epitaxy of Crack-Free GaN on Si (111) Exceeding 1 µm in Thickness
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