Effect of Si doping on strain, cracking, and microstructure in GaN thin films grown by metalorganic chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.373529
Reference33 articles.
1. Intrinsic and Thermal Stress in Gallium Nitride Epitaxial Films
2. Relaxation Mechanism of Thermal Stresses in the Heterostructure of GaN Grown on Sapphire by Vapor Phase Epitaxy
3. Strain-related phenomena in GaN thin films
4. Effect of Si doping on the dislocation structure of GaN grown on the A‐face of sapphire
5. Stress relaxation in Si-doped GaN studied by Raman spectroscopy
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