Structural, electrical and luminescent characteristics of ultraviolet light emitting structures grown by hydride vapor phase epitaxy-Reference-Cited by-同舟云学术

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Structural, electrical and luminescent characteristics of ultraviolet light emitting structures grown by hydride vapor phase epitaxy

Published:2017-03 Issue:1 Volume:3 Page:32-39
ISSN:2452-1779
Container-title:Modern Electronic Materials
language:en
Short-container-title:Modern Electronic Materials

Author:

Polyakov A.Y.,Yun Jin-Hyeon,Usikov A.S.,Yakimov E.B.,Smirnov N.B.,Shcherbachev K.D.,Helava H.,Makarov Y.N.,Kurin S.Y.,Shmidt N.M.,Rabinovich O.I.,Didenko S.I.,Tarelkin S.A.,Papchenko B.P.,Lee In-Hwan

Funder

Ministry of Education and Science of the Russian Federation

Ministry of Science, ICT & Future Planning

Publisher

Pensoft Publishers

Subject

Automotive Engineering

Reference41 articles.

1. III-nitride optoelectronic devices: from ultraviolet toward terahertz;Razeghi;IEEE Photonics J,2011

2. Light-Emitting Diodes;Schubert,2006

3. Growth of III-nitride photonic structures on large area silicon substrates;Li;Appl. Phys. Lett.,2006

4. 284-300nm Quaternary InAlGaN-based deep-ultraviolet light-emitting diodes on Si(111) substrates;Fujikawa;Appl. Phys. Express,2011

5. Near milliwatt power AlGaN-based ultraviolet light emitting diodes based on lateral epitaxial overgrowth of AlN on Si(111);Zhang;Appl. Phys. Lett.,2013

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Current-voltage characteristic and electroluminescence of UV LEDs 365 nm at liquid nitrogen temperature;OPT APPL;2019

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