Near milliwatt power AlGaN-based ultraviolet light emitting diodes based on lateral epitaxial overgrowth of AlN on Si(111)
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4773565
Reference17 articles.
1. Characterization of GaN-Based Light Emitting Diodes Grown on 4-in. Si(111) Substrate
2. InGaN-based light-emitting diodes grown and fabricated on nanopatterned Si substrates
3. Effect of Graded Al$_{x}$Ga$_{1-x}$N Layers on the Properties of GaN Grown on Patterned Si Substrates
4. Growth of blue GaN LED structures on 150-mm Si(111)
5. Lateral epitaxial overgrowth of GaN films on sapphire and silicon substrates
Cited by 54 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Advanced HVPE sublimation sandwich method for Si layer formation on SiC substrates;Journal of the Korean Physical Society;2024-09-04
2. High-quality Ge epitaxial film based on dislocation trapping mechanism in patterned Si substrate;Japanese Journal of Applied Physics;2024-02-01
3. Atomic layer deposition of Al2O3 interlayer for improving AlN growth on silicon substrates;Journal of Vacuum Science & Technology A;2023-08-02
4. Realization of Low Dislocation Density AlN on Patterned Sapphire Substrate by Hydride Vapor‐Phase Epitaxy for Deep Ultraviolet Light‐Emitting Diodes;physica status solidi (a);2023-05-23
5. Nanowire Template Assisted Epitaxy of Ultrawide Bandgap III-Nitrides on Si: Role of the Nanowire Template;ACS Applied Optical Materials;2023-03-14
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3