3D numerical analysis of influence of the non-uniform deposition rate on the hillock density at HVPE-GaN surface-Reference-Cited by-同舟云学术

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3D numerical analysis of influence of the non-uniform deposition rate on the hillock density at HVPE-GaN surface

Published:2017-09 Issue: Volume:474 Page:81-88
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Han Xue-Feng,Lee Jae-Hak,Lee Yoo-Jin,Song Jae-Ho,Yi Kyung-Woo

Funder

National Research Foundation of Korea

Ministry of Science, ICT and Future Planning, Republic of Korea

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference18 articles.

1. Nitrogen precursors in metalorganic vapor phase epitaxy of (Al,Ga)N;Beaumont;J. Cryst. Growth,1995

2. Ammonothermal crystal growth of GaN using an NH4F mineralizer;Bao;Cryst. Growth Des.,2013

3. Bulk GaN crystals grown by HVPE;Fujito;J. Cryst. Growth,2009

4. Optimization of low temperature GaN buffer layers for halide vapor phase epitaxy growth of bulk GaN;Hemmingsson;J. Cryst. Growth,2013

5. Highly uniform growth of 2-inch GaN wafers with a multi-wafer HVPE system;Liu;J. Cryst. Growth,2014

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Influence of porous media and substrate rotation on AlN growth in MNVPE reactors based on CFD simulations;Materials Science in Semiconductor Processing;2024-11

2. Influence of Porous Media and Substrate Rotation on Aln Deposition in Mnvpe Reactors Based on Cfd Simulations;2024

3. Hydride vapor phase epitaxy for gallium nitride substrate;Journal of Semiconductors;2019-10-01

4. Gallium nitride;Single Crystals of Electronic Materials;2019

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