Influence of porous media and substrate rotation on AlN growth in MNVPE reactors based on CFD simulations

Author:

Song Yuxuan,Zhang Hui,Gao Nan,Li Chaoyuan,Xie Xinjian,Bian Lifeng,Fang Yulong,Chen Guifeng

Publisher

Elsevier BV

Reference28 articles.

1. Low dislocation density AlN on sapphire prepared by double sputtering and annealing;Wang;APEX,2020

2. Investigation of hydride vapor phase epitaxial growth of AlN on sputtered AlN buffer layers;Huang;CrystEngComm,2019

3. Power enhancement of 265 nm DUV-LED flip-chip by HVPE-AlN high-temperature annealing;Yue;Micromachines,2023

4. Effects of argon/nitrogen sputtering gas on the microstructural, crystallographic and piezoelectric properties of AlN thin films;Abd Samad;Scripta Mater.,2023

5. Effects of substrate pretreatment and annealing processes on AlN thin films prepared by EVPE;Xie;Mater. Sci. Semicond. Process.,2022

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