Ammonothermal Crystal Growth of GaN Using an NH4F Mineralizer-Reference-Cited by-同舟云学术

Ammonothermal Crystal Growth of GaN Using an NH4F Mineralizer

Published:2013-08-30 Issue:10 Volume:13 Page:4158-4161
ISSN:1528-7483
Container-title:Crystal Growth & Design
language:en
Short-container-title:Crystal Growth & Design

Author:

Bao Quanxi¹²,Saito Makoto¹³,Hazu Kouji¹,Furusawa Kentaro¹,Kagamitani Yuji³,Kayano Rinzo²,Tomida Daisuke¹,Qiao Kun¹,Ishiguro Tohru¹,Yokoyama Chiaki¹,Chichibu Shigefusa F.¹

Affiliation:

1. Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Sendai 980-8577, Japan

2. Japan Steel Works, Ltd., 11-1, Osaki 1-chome, Shinagawa-ku, Tokyo 141-0032, Japan

3. Mitsubishi Chemical Corp., 1000 Higashi-Mamiana, Ushiku, Ibaraki 300-1295, Japan

Publisher

American Chemical Society (ACS)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/cg4007907

Reference11 articles.

1. Hydride vapor phase epitaxial growth of a high quality GaN film using a ZnO buffer layer

2. Preparation of GaN Single Crystals Using a Na Flux

3. Crystal growth of III-N compounds under high nitrogen pressure

4. GaN Synthesis by Ammonothermal Method

5. Ammonothermal synthesis of thick gallium nitride film employing acidic mineralizers

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