Numerical analysis on the origin of thickness unevenness and formation of pits at GaN thin film grown by HVPE-Reference-Cited by-同舟云学术

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Numerical analysis on the origin of thickness unevenness and formation of pits at GaN thin film grown by HVPE

Published:2016-09 Issue: Volume:450 Page:66-73
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Han Xue-Feng,Lee Jae-Hak,Lee Yoo-Jin,Song Jae-Ho,Yi Kyung-Woo

Funder

National Research Foundation of Korea (NRF)

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference29 articles.

1. Growth of gallium nitride by hydride vapor-phase epitaxy;Molnar;J. Cryst. Growth,1997

2. GaN growth using GaN buffer layer;Nakamura;Jpn. J. Appl. Phys.,1991

3. InGaN-based multi-quantum-well-structure laser diodEs;Nakamura;Jpn. J. Appl. Phys.,1996

4. In-situ monitoring of GaN growth by hydride vapor phase epitaxy;Martin;Phys. Status Solidi (A),2002

5. A Review on the reliability of GaN-based LEDs;Meneghini;IEEE Trans. Device Mater. Reliab.,2008

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Hydride vapor phase epitaxy for gallium nitride substrate;Journal of Semiconductors;2019-10-01

2. Gallium nitride;Single Crystals of Electronic Materials;2019

3. Chromium Carbide Growth by Direct Liquid Injection Chemical Vapor Deposition in Long and Narrow Tubes, Experiments, Modeling and Simulation;Coatings;2018-06-13

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