Alloy broadening effect on optical properties of InGaAs grown by MOCVD with TMAs precursor
Author:
Publisher
Elsevier BV
Subject
General Engineering
Reference12 articles.
1. Optical and crystallographic properties and impurity incorporation of GaxIn1−xAs (0.44
2. Alloy broadening in photoluminescence spectra of Ga0.47In0.53As
3. Comparison of ethyldimethylindium (EDMIn) and trimethylindium (TMIn) for GaInAs and InP growth by LP-MOVPE
4. Surface morphology of InGaAs and InP materials grown with trimethylarsenic and arsine on vicinal InP substrates
5. MOMBE growth of InGaAs using trisdimethylaminoarsenic
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