Optical and crystallographic properties and impurity incorporation of GaxIn1−xAs (0.44
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.332655
Reference29 articles.
1. Ga<inf>0.47</inf>In<inf>0.53</inf>As: A ternary semiconductor for photodetector applications
2. Fast photoconductive detector using p‐In0.53Ga0.47As with response to 1.7 μm
3. A high gain In0.53Ga0.47As/InP avalanche photodiode with no tunneling leakage current
4. Small area InGaAs/InP p-i-n photodiodes: fabrication, characteristics and performance of devices in 274 Mb/s and 45 Mb/s lightwave receivers at 1.31 μm wavelength
5. High-speed Ga0.47In0.53as photoconductive detector for picosecond light pulses
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