Photoluminescence of heterostructures containing an In x Ga1–x As quantum well with a high in content at different excitation powers-Reference-Cited by-同舟云学术

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Photoluminescence of heterostructures containing an In x Ga1–x As quantum well with a high in content at different excitation powers

Published:2015-09 Issue:9 Volume:49 Page:1218-1221
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Lavrukhin D. V.,Khabibullin R. A.,Ponomarev D. S.,Maltsev P. P.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063782615090183.pdf

Reference19 articles.

1. D. V. Lavrukhin, A. E. Yachmenev, R. R. Galiev, R. A. Khabibullin, D. S. Ponomarev, Yu. V. Fedorov, and P. P. Maltsev, Semiconductors 48,69(2014).

2. T. Kim and J. A. del Alamo, Electron. Lett. 47,406(2011).

3. J. Schneider, J. Pietralla, and H. Heinecke, Cryst. Growth 175–176,184(1997).

4. T. Sauncy, M. Holtz, O. Brafman, D. Fekete, and Y. Finkelstein, Phys. Rev. B 59,5049(1999).

5. L. Yang, J. Motohisa, K. Tomioka, J. Takeda, T. Fukui, M. Geng, L. Jia, L. Zhang, and Y. L. Liu, Nanotechnology 19,275304(2008).

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1. Photoluminescence of extended defects in heterostructures with InAlAs metamorphic buffer at different excitation wavelengths;Journal of Luminescence;2020-10

2. Ultrafast Dynamics of Photoexcited Charge Carriers in In0.53Ga0.47As/In0.52Al0.48As Superlattices under Femtosecond Laser Excitation;Semiconductors;2018-06-07

3. Temporal stability and absolute composition issues in molecular beam epitaxy of AlGaAs/GaAs THz QCL;EPJ Web of Conferences;2018

4. Electrical and thermal properties of photoconductive antennas based on In x Ga1 – x As (x > 0.3) with a metamorphic buffer layer for the generation of terahertz radiation;Semiconductors;2017-09

5. Photoluminescence Study of the Interface Fluctuation Effect for InGaAs/InAlAs/InP Single Quantum Well with Different Thickness;Nanoscale Research Letters;2017-03-29

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