InGaAs HEMT with InAs-rich InAlAs barrier spacer for reduced source resistance
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el.2010.3666?crawler=true&mimetype=application/pdf
Reference8 articles.
1. 30-nm InAs PHEMTs With $f_{T} = \hbox{644}\ \hbox{GHz}$ and $f_{\max} = \hbox{681}\ \hbox{GHz}$
2. 547-GHz<tex>$f_t$</tex>In<tex>$_0.7$</tex>Ga<tex>$_0.3$</tex>As–In<tex>$_0.52$</tex>Al<tex>$_0.48$</tex>As HEMTs With Reduced Source and Drain Resistance
3. A Self-Aligned InGaAs HEMT Architecture for Logic Applications
4. A Capless$hboxInP/hboxIn_0.52hboxAl_0.48hboxAs/hboxIn_0.53hboxGa_0.47hboxAs$p-HEMT Having a Self-Aligned Gate Structure
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2. Reducing the Source Resistance by Increasing the Gate Effect on Substrate for Future Terahertz HEMT Device;Advances in Electrical and Electronic Engineering;2021-12-30
3. ${L}_{{g}} = {87}$ nm InAlAs/InGaAs High-Electron- Mobility Transistors With a g m_max of 3 S/mm and $f_{{T}}$ of 559 GHz;IEEE Electron Device Letters;2018-11
4. Reducing the Source Resistance of an HEMT Based on InAs0.3P0.7 by Increasing the Holes Concentration for THz Applications;Journal of Nanoelectronics and Optoelectronics;2018-02-01
5. Photoluminescence of heterostructures containing an In x Ga1–x As quantum well with a high in content at different excitation powers;Semiconductors;2015-09
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