Control of chemical composition and band gap energy in Ga In1 − − Al As on InP during molecular beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference13 articles.
1. Compositional dependence of band‐gap energy and conduction‐band effective mass of In1−x−yGaxAlyAs lattice matched to InP
2. Composition dependence of band gap and type of lineup in In1−x−yGaxAlyAs/InP heterostructures
3. Electron effective mass and band‐gap dependence on alloy composition of AlyGaxIn1−y−xAs, lattice matched to InP
4. MBE Growth of InGaAlAs Lattice-Matched to InP by Pulsed Molecular Beam Method
5. Quasi‐donor‐acceptor pair photoluminescence emission in GaxIn1−xAs/InP
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1. Strained AlGaInAs on InP: Bandgap dependence on composition—Model benchmark and optimization;Journal of Applied Physics;2023-12-26
2. Photoluminescence of heterostructures containing an In x Ga1–x As quantum well with a high in content at different excitation powers;Semiconductors;2015-09
3. Electron mobility and effective mass in composite InGaAs quantum wells with InAs and GaAs nanoinserts;Semiconductors;2012-04
4. Electron effective masses in an InGaAs quantum well with InAs and GaAs inserts;Semiconductor Science and Technology;2012-02-10
5. A convenient band-gap interpolation technique and an improved band line-up model for InGaAlAs on InP;Applied Physics B;2010-04-09
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