Composition dependence of band gap and type of lineup in In1−x−yGaxAlyAs/InP heterostructures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.110648
Reference21 articles.
1. Very low threshold InGaAs/InGaAsP graded index separate confinement heterostructure quantum well lasers grown by atmospheric pressure metalorganic vapor phase epitaxy
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3. Ga<inf>0.47</inf>In<inf>0.53</inf>As: A ternary semiconductor for photodetector applications
4. InGaAs/InGaAlAs/InAlAs/InP SCH-MQW laser diodes grown by molecular-beam epitaxy
5. Spatially indirect intersubband transitions of localized electrons and holes at the staggered band lineup In0.52Al0.48As/InP interface
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1. A convenient band-gap interpolation technique and an improved band line-up model for InGaAlAs on InP;Applied Physics B;2010-04-09
2. Comment on “Theory and Experiment of ${\hbox{In}}_{1-{x}}{\hbox {Ga}}_{x}{\hbox {As}}_{y}{\hbox{P}}_{1-{y}}$ and ${\hbox{In}}_{1-{x}-{y}}{\hbox {Ga}}_{x}{\hbox {Al}}_{y}{\hbox {As}}$ Long-Wavelength-Strained Quantum-Well Lasers”;IEEE Journal of Quantum Electronics;2009-10
3. Electromodulation spectroscopy of In0.53Ga0.47As/In0.53Ga0.23Al0.24As quantum wells;Superlattices and Microstructures;2009-09
4. Energy gap and bond lengths of AlxGayIn1–x –yN, AlxGayIn1–x –yP and AlxGayIn1–x –yAs quaternary alloys;physica status solidi (c);2007-02
5. Statistical model applied toAxByC1−x−yDquaternary alloys: Bond lengths and energy gaps ofAlxGayIn1−x−yX(X=As, P, or N) systems;Physical Review B;2006-06-14
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