Electromodulation spectroscopy of In0.53Ga0.47As/In0.53Ga0.23Al0.24As quantum wells-Reference-Cited by-同舟云学术

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Electromodulation spectroscopy of In0.53Ga0.47As/In0.53Ga0.23Al0.24As quantum wells

Published:2009-09 Issue:3 Volume:46 Page:425-434
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Kudrawiec R.,Podemski P.,Motyka M.,Misiewicz J.,Serafińczuk J.,Somers A.,Reithmaier J.P.,Forchel A.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference32 articles.

1. Band parameters for III–V compound semiconductors and their alloys

2. Heterostructure Lasers, Part B;Casey,1978

3. Compositional dependence of band‐gap energy and conduction‐band effective mass of In1−x−yGaxAlyAs lattice matched to InP

4. Material for future InP-based optoelectronics: InGaAsP versus InGaAlAs

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. On the mechanisms of energy transfer between quantum well and quantum dashes;Journal of Applied Physics;2012-08

2. Contactless electroreflectance spectroscopy of optical transitions in low dimensional semiconductor structures;Opto-Electronics Review;2012-01-01

3. Optical Modulation Spectroscopy;Semiconductor Research;2012

4. Contactless electroreflectance of optical transitions in tunnel-injection structures composed of an In0.53Ga0.47As/In0.53Ga0.23Al0.24As quantum well and InAs quantum dashes;Journal of Applied Physics;2010-10-15

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