MHEMT with a power-gain cut-off frequency of f max = 0.63 THz on the basis of a In0.42Al0.58As/In0.42Ga0.58As/In0.42Al0.58As/GaAs nanoheterostructure-Reference-Cited by-同舟云学术

MHEMT with a power-gain cut-off frequency of f max = 0.63 THz on the basis of a In0.42Al0.58As/In0.42Ga0.58As/In0.42Al0.58As/GaAs nanoheterostructure

Published:2014-01 Issue:1 Volume:48 Page:69-72
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Lavrukhin D. V.,Yachmenev A. E.,Galiev R. R.,Khabibullin R. A.,Ponomarev D. S.,Fedorov Yu. V.,Maltsev P. P.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063782614010187.pdf

Reference19 articles.

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2. D. Kim, J. Alamo, P. Chen, W. Ha, M. Urteaga, and B. Brar, in Proceedings of the IEEE International Electron Devices Meeting (2010), p. 30.6.1.

3. J. A. del Alamo, Nature 479, 317 (2011).

4. D.-H. Kim, B. Brar, and J. A. del Alamo, in Proceedings of the IEEE International Electron Devices Meeting (Washington, DC, 2011).

5. A. Leuther, A. Tessmann, H. Massler, R. Aidam, M. Schlechtweg, and O. Ambacher, in Proceedings of the 24th International Conference on Indium Phosphide and Related Materials (2012).

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